elektronische bauelemente SMG2361P -3.4a , -60v , r ds(on) 210 m ? p-channel enhancement mosfet 22-aug-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. s c - 59 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a hig h cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe sc-59 saves board space. fast switching speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as co mputers, printers, pcmcia cards, cellular and cordless telep hones. package information package mpq leader size sc-59 3k 7 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v t a =25c -3.4 continuous drain current 1 t a =70c i d -2.6 a pulsed drain current 2 i dm -20 a continuous source current (diode conduction) 1 i s -1.6 a t a =25c 1.3 power dissipation 1 t a =70c p d 0.8 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance data t Q 10 sec 100 maximum junction to ambient 1 steady-state r ja 166 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure. millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50
elektronische bauelemente SMG2361P -3.4a , -60v , r ds(on) 210 m ? p-channel enhancement mosfet 22-aug-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min typ max unit test condition static gate-threshold voltage v gs(th) -1 - - v v ds =v gs , i d = -250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 20v - - -1 v ds = -48v, v gs =0 zero gate voltage drain current i dss - - -10 a v ds = -48v, v gs =0, t j =55c on-state drain current 1 i d(on) -8 - - a v ds = -5v, v gs = -10v - - 210 v gs = -10v, i d = -2.7a drain-source on-resistance 1 r ds(on) - - 250 m v gs = -4.5v, i d = -2.2a forward transconductance 1 g fs - 10 - s v ds = -15v, , i d = -2.7a diode forward voltage v sd - -0.83 - v i s = -0.8a, v gs =0 dynamic 2 total gate charge q g - 5 - gate-source charge q gs - 2.2 - gate-drain charge q gd - 2.3 - nc i d = -2.7a v ds = -30v v gs = -4.5v turn-on delay time td (on) - 7 - rise time t r - 5 - turn-off delay time td (off) - 23 - fall time t f - 6 - ns i d = -2.7a, v ds = -30v, v gen = -10v, r gen =6 r l =11.2 input capacitance c iss - 371 - output capacitance c oss - 31 - reverse transfer capacitance c rss - 26 - pf v ds = -15v v gs =0 f=1mhz notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente SMG2361P -3.4a , -60v , r ds(on) 210 m ? p-channel enhancement mosfet 22-aug-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente SMG2361P -3.4a , -60v , r ds(on) 210 m ? p-channel enhancement mosfet 22-aug-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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